Total Credits: 10
Level: Level 3
Target Students: BEng and MEng students of Electrical and Electronic Engineering Available to JYA/Erasmus students.
|Autumn||Assessed by end of Autumn Semester|
Prerequisites: An understanding of the physics of semiconductor materials. A good understanding of p-n junctions. Understanding of the nature of signals in information transfer. Basic understanding of calculus and differential equations.
Summary of Content: This module seeks to develop a detailed understanding of the internal operating mechanisms of semiconductor electronic and opto-electronic devices. The module will focus on devices based on pn junctions (e.g. diodes, bipolar junction transistors) and devices based on MOS capacitors (e.g. memory cells, CCD detectors, MOSFETs). The module will consider how the targeted application for a device impacts upon its design. (For example, signal-mixing diodes, power diodes, light-emitting diodes and solar cells are all based upon the pn diode, but provide very different functionality.) The characteristics required of these devices will be discussed in relation to their incorporation into appropriate electronic systems.
Method and Frequency of Class:
|Activity||Number Of Weeks||Number of sessions||Duration of a session|
|Lecture||11 weeks||1 per week||2 hours|
Method of Assessment:
|Exam 1||100||2 hour exam – Best answers for three out of five questions|
Professor E Larkins
Education Aims: This module aims to introduce students to the internal operation of commonly used electronic and optoelectronic semiconductor devices, instead of treating them in a phenomenological fashion (i.e. as "black boxes"). The module also seeks to illustrate how the device design and performance relates to the underlying materials and physical processes and how the demands of the targeted application affect the device design
By the end of the module, students should be able to:
Offering School: Department of Electrical & Electronic Engineering
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